School of Engineering

E. Fred Schubert
Professor
Constellation Chair, Future Chips http://www.rpi.edu/~schubert/

Department Affiliation:

Department of Electrical, Computer, & Systems Engineering

Education:

M.S., University of Stuttgart, Germany
Electrical Engineering

B.S., University of Stuttgart, Germany
Electrical Engineering

Background:

After completing his master's degree, Schubert spent four years studying compound semiconductor crystal growth as a scientific staff member at the Max Planck Institute for Solid State Research. He later joined AT&T Bell Laboratories in Holmdel, N.J., where he spent two years as a postdoctoral fellow. From 1988 to 1995, Schubert served as principal investigator in the Research Division of AT&T Bell Laboratories in Murray Hill, N.J. In 1995, he joined Boston University and was appointed to a full professorship in the Department of Electrical and Computer Engineering. He also was named an affiliated member of the Photonics Center. At BU, he was responsible for GaN materials characterization and the fabrication of compound semiconductor devices particularly GaN-based devices. He continued to serve as an adjunct professor for Boston University from 2002 to 2003.

In 2002, Schubert was appointed Senior Constellation Chair of the Future Chip Constellation and Professor in the Department of Electrical, Computer, and Systems Engineering at Rensselaer.

Schubert authored the books, Light-Emitting Diodes (2003); and Doping in III-V Semiconductors (1993); and edited the book, Delta Doping of Semiconductors (1996), all from Cambridge University Press. Schubert also has published nearly 200 research papers, has contributed several book chapters, and is inventor or co-inventor of about 25 U.S. patents.

Research Interests:

Schubert's primary research interest is in the field of compound semiconductor materials and devices. His studies include epitaxial growth, materials characterization, device processing and fabrication, device design, and device characterization. Devices include heterobipolar transistors, light-emitting diodes, and lasers for communication, lighting, and sensing applications.

Schubert has made pioneering contributions in compound semiconductor materials and devices. His accomplishments include the discovery and first analysis of alloy broadening, the development of delta doped structures, superlattice doping in p-type GaN and AlGaN for increased acceptor activation, and compositional parabolic grading for elimination of band discontinuities in unipolar heterojunctions. He demonstrated the first resonant-cavity light-emitting diode (RCLED), which is the first practical device taking advantage of spontaneous emission enhancement; he also showed the first spontaneous emission and absorption enhancement in Er-doped Si/SiO2 microcavities. His recent accomplishments include polarization-enhanced ohmic contacts in III-V nitride materials, the explanation of the high diode ideality factors (> 2.0) found in III-V nitride p-n junction diodes, and the demonstration of high-reflectivity omni-directional