webcasts2008 Finalist :: Weixiao Huang
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BioWeixiao Huang
Department of Electrical, Computer, and Systems Engineering
Weixiao Huang’s transistor has already captured the attention of some of the biggest American and Japanese automobile companies and could replace one of the most common pieces of technology in the world—the silicon transistor for high-power and high-temperature electronics.
The potentially revolutionary new transistor uses a compound material known as gallium nitride (GaN), which has remarkable material properties. The new GaN transistor could reduce the power consumption and improve the efficiency of power electronics systems in everything from motor drives and hybrid vehicles to house appliances and defense equipment.
Each household likely contains dozens of silicon-based electronics. An important component of each of those electronics is usually a silicon-based transistor know as a silicon metal/oxide semiconductor field-effect transistor (silicon MOSFET). To convert the electric energy to other forms as required, the transistor acts as a switch, allowing or disallowing the flow of current through the device. The transistor can greatly reduce energy loss, making energy conversion more efficient.
Huang first developed a new process that demonstrates a great GaN MOS (metal/oxide/GaN) interface. Engineers have known that GaN and other gallium-based materials have some extremely good electrical properties, much better than silicon. However, until Huang’s innovation, no useful GaN MOS transistor has been developed. Huang’s innovation, the first GaN MOSFET of its kind in the world, has already shown world-record performances. In addition, Huang has shown that his innovation can integrate several important electronic functions onto one chip like never before. This will significantly simplify entire electronic systems.
The new GaN transistors can also allow the electronics system to operate in extremely hot, harsh, and high-power environments and even those that produce radiation. Its extreme resilience could open up the field of electronic engineering in ways that were not previously possible due to the limitations imposed by less tolerant silicon transistors.
As a pioneer in this area, Huang has also developed several other new GaN MOS transistor structures. These power transistors have shown impressive experimental results and are superior to equivalent silicon MOSFETs in terms of lower power consumption, smaller chip area, and higher power density.
The new transistors that Huang has developed will make the power electronics systems extremely efficient. If the new GaN transistors replaced many existing silicon MOSFETs in power electronics systems, there would be global reduction in fossil fuel consumption and pollution.
Huang, who has published more than 15 papers during his time as doctoral student in the department of electrical, computer, and systems engineering at Rensselaer, comes from humble roots as the son of farmers in rural China. Despite obvious difficulties, his parents worked tirelessly to give Huang the best possible educational opportunities. And when school wasn’t enough, Huang’s father woke him up early every morning to practice mathematical calculations without a calculator, instilling in Huang a lifelong appreciation for basic, theoretical mathematics and sciences.
He received a bachelor’s in electronics from Peking University in Beijing in 2001 and a master’s in physics from Rensselaer in 2002. He expects to complete his doctorate at Rensselaer this spring.
